Atomistic Simulations of Flash Memory Materials Based on Chalcogenide Glasses

摘要

In this chapter, by using ab-initio molecular dynamics, we introduce thelatest simulation results on two materials for flash memory devices: Ge2Sb2Te5and Ge-Se-Cu-Ag. This chapter is a review of our previous work including someof our published figures and text in Cai et al. (2010) and Prasai & Drabold(2011) and also includes several new results.